PART |
Description |
Maker |
STE24NA100 6251 |
From old datasheet system N - CHANNEL 1000V - 0.35ohm - 24A - ISOTOP FAST POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
APT10057WVR |
POWER MOS V 1000V 17.3A 0.570 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
OM5325SW |
1000V 24A Hi-Rel Ultra-Fast Common Cathode Diode in a D3 package
|
International Rectifier
|
APT4014BVFR APT4014SVFR APT4014BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 28; RDS(on) (Ohms): 0.14; BVDSS (V): 400; 28 A, 400 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD POWER MOS V FREDFET
|
Microsemi, Corp. Advanced Power Technology http://
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APT6025BFLL APT6025SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 24A 0.250 Ohm
|
Advanced Power Technology, Ltd.
|
M68732L 68732L |
SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIO 硅场效应晶体管功率放大器00 - 430MHz瓦,调频便携式收音机 From old datasheet system RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
APT10030L2VR |
POWER MOS V 1000V 33A 0.300 Ohm
|
Advanced Power Technology
|
APT10030L2VFR |
POWER MOS V 1000V 33A 0.300 Ohm
|
Advanced Power Technology
|
APT1004 APT1004RCN |
POWER MOS IV 1000V 3.6A 4.00 Ohm N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
APL1001P |
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000V 18.0A 0.60OHM
|
Advanced Power Technology
|
APT10026JN |
POWER MOS IV 1000V 33A 0.26 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|